2SA1606 transistor equivalent, silicon pnp power transistor.
*Designed for high-voltage switching, AF power amplifier,
100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V (Min)
*Large Current Capacity
*Complement to Type 2SC4159
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for h.
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